The electron and hole system are described by a Fermi-Dirac distribution with two parameters: the quasi-Fermi level μ and the carrier temperature Tc which is initially higher than the lattice temperature Tc> TL. 这时电子和空穴各自分布在能带底,形成准费米狄拉克分布。这种热平衡费米分布可以用两个参数来描述,准费米能级μ和载流子温度Tc,开始时载流子温度高于晶格温度Tc>Tl。
Two different methods are introduced, which are quasi-Fermi level and pn junction model employed to determine the voltage of active layer in VCSEL. 分别使用准Fermi能级和pn结模型决定VCSEL的有源层压降,建立了两种自洽确定VCSEL中电势及载流子分布的方法。
In addition, some different concepts, for example, "the quasi-Fermi level discontinuity" and "effective emission velocity of the carriers" are proposed. 文中还提出了准费米能级不连续性、载流子有效发射速度等与传统观念不同的新概念。
Diffusion-limited quasi-Fermi level near a grain boundary of n-type polycrystalline semiconductors 扩散极限下n型半导体的晶界附近的准费米能级